Effect of Geometry and Gate Voltage on the Conductance of an Ideal Strip of Graphene

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dc.contributor.author Momtazbaf, Hadi
dc.date.accessioned 2015-04-22T23:45:55Z
dc.date.available 2015-04-22T23:45:55Z
dc.date.copyright April 2015 en_US
dc.date.issued 2015-04-22
dc.identifier.uri http://hdl.handle.net/1828/5989
dc.description.abstract One of the enormous challenges in the transistor fabrication industry is to find materials with suitable electronic properties. On the other hand, the size of electronic systems is being reduced every day. Therefore, flexibility and suitable electronic properties are required simultaneously. Graphene is a perfect example of a two dimensional (2D) electronic transport system that shows resilience, as it is a very specific one-atom thick structure that has surprising metallic electronic properties. In this report, I have simplified the mode-dependent transmission probability of Dirac fermions in an ideal graphene nanoribbon (length L, width W, and no impurities), to determine the conductance as a function of the Fermi energy in the channel. The conductance results presented in this project are based on two main components (a) geometry, and (b) chemical potential variation in the channel (gate voltage). First by setting the gate voltage to zero, the effect of altering the geometry (aspect ratio between W and L), on the conductance is evaluated. Then the chemical potential (gate voltage) is changed while keeping the geometry fixed. Finally, the physical relationship between the chemical potential and gate voltage in a field effect transistor (FET) channel is examined, and the connection between the conductance and gate voltage for a range of aspect ratios is assessed. Performance results are presented which show that the conductance of a narrow and wide graphene strips has a universal minimum value (quantum conductance), at the Dirac point (gate voltage equal to zero), which is an important criterion in achieving a ballistic channel. en_US
dc.language.iso en en_US
dc.rights Available to the World Wide Web en_US
dc.rights.uri http://creativecommons.org/publicdomain/zero/1.0/ *
dc.subject Effect of Geometry en_US
dc.subject Gate Voltage en_US
dc.subject Conductance en_US
dc.subject Graphene en_US
dc.title Effect of Geometry and Gate Voltage on the Conductance of an Ideal Strip of Graphene en_US
dc.type project en_US
dc.contributor.supervisor Gulliver, Aaron
dc.degree.department Department of Electrical and Computer Engineering en_US
dc.degree.level Master of Engineering M.Eng. en_US
dc.rights.temp Available to the World Wide Web en_US
dc.rights.temp CC0 1.0 Universal *
dc.description.scholarlevel Graduate en_US

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