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Browsing by Supervisor "Jiang, Nianhua"
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High Frequency Small-Signal Modelling of GaN High Electron Mobility Transistors for RF applications (2016-12-09)In this project, a 16-element Bias-Dependent Small-Signal Model (BD-SSM) equivalent circuit for the Gallium Nitride (GaN) High Electron Mobility Transistor (HEMT) is developed. Intrinsic and extrinsic values of the proposed ...
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