Growth of CdTe/ CdZnTe single crystals by the vertical gradient freezing method
| dc.contributor.author | Li, Lingzhi | en_US |
| dc.date.accessioned | 2024-08-14T21:03:36Z | |
| dc.date.available | 2024-08-14T21:03:36Z | |
| dc.date.copyright | 1999 | en_US |
| dc.date.issued | 1999 | |
| dc.degree.department | Department of Mechanical Engineering | |
| dc.degree.level | Master of Applied Science M.A.Sc. | en |
| dc.description.abstract | Single crystals of CdTe/CdZnTe are important semiconducting materials for the development of x-ray and y-ray detectors. They can also be used as substrates for the epitaxial growth of HgCdTe, which is a key material for far-infrared detectors with high resolution and large detection area. Currently, there are no mature techniques to grow CdTe/CdZnTe single crystals, and the cost of these materials for commercial purposes is still high. In this thesis, a combined experimental/ theoretical study is undertaken. The phenomena of supercooling and superheating of CdTe/CdZnTe, which play an important role in the quality and size of grown crystals, are discussed. A VGF crystal growth facility and a growth procedure for CdTe/CdZnTe are developed. A unique technique (temperature profile) is designed to take advantages of superheating and confine the detrimental effect of supercooling during crystal growth. The electrical properties and defect structures of the CdTe/CdZnTe crystals grown by this VGF facility are also analyzed and reported. | |
| dc.format.extent | 89 pages | |
| dc.identifier.uri | https://hdl.handle.net/1828/18652 | |
| dc.rights | Available to the World Wide Web | en_US |
| dc.title | Growth of CdTe/ CdZnTe single crystals by the vertical gradient freezing method | en_US |
| dc.type | Thesis | en_US |
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