Numerical Analysis of Electromagnetic Convection for Single Crystal SiC Growth by Top Seeded Solution Growth (TSSG) Technique
Date
2023-04-04
Authors
Ozcan, Imdat Emirhan
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Abstract
Top-Seeded Solution Growth (TSSG) is a very effective single crystal growth
process that is working based on the Czochralski method. In this growth technique,
there is a seed crystal that is dipped into the melt of the same material at a high
temperature. It has a boundary between the seed crystal and melt where growth
occurs. This boundary is highly affected by the fluid flow. Controlling the fluid flow
is the key feature of the TSSG technique. Many advanced materials can be obtained
by this method. Silicon Carbide (SiC) studied in this thesis is one of the advanced
materials that shows semiconductor properties. Because of this attribute, SiC is
widely used in the electronics industry.
In this thesis, different convection mechanisms are investigated for SiC
single-crystal growth with the TSSG technique. Since the graphite crucible is the
only source of carbon atoms in the system, transportation of carbon atoms from
the crucible walls to the seed crystal is needed for efficient growth. To maintain
this transportation, the silicon melt is induction coupled by electromagnetic
coils. Controlling the fluid flow is maintained with electromagnetic forces which are
generated by the coils in the TSSG furnace. Respectively, a numerical study has
been conducted to determine the electromagnetic forces in the silicon melt. Also,
the distribution of electromagnetic forces in the silicon melt is analyzed. Effects of
different working frequencies are described. Results are compared to the buoyancy
body forces in the system. To overcome buoyancy forces in the system, the needed
amount of electromagnetic forces is explained.
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Keywords
Top Seeded Solution Growth (TSSG), Electromagnetic Convection, Single Crystal Growth, Silicon Carbide (SiC), Material Science, Advanced Materials