High Frequency Small-Signal Modelling of GaN High Electron Mobility Transistors for RF applications

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dc.contributor.authorLiu, Zhen
dc.contributor.supervisorSo, Poman
dc.contributor.supervisorJiang, Nianhua
dc.date.accessioned2016-12-10T02:52:58Z
dc.date.available2016-12-10T02:52:58Z
dc.date.copyright2016en_US
dc.date.issued2016-12-09
dc.degree.departmentDepartment of Electrical and Computer Engineeringen_US
dc.degree.levelMaster of Engineering M.Eng.en_US
dc.description.abstractIn this project, a 16-element Bias-Dependent Small-Signal Model (BD-SSM) equivalent circuit for the Gallium Nitride (GaN) High Electron Mobility Transistor (HEMT) is developed. Intrinsic and extrinsic values of the proposed model are extracted from S-parameter data measured at different bias conditions. This model has multiple sets of circuit element values and each set is tuned using Advanced Design System (ADS) for a particular bias condition. Moreover, GaN HEMTs of various sizes are modelled using the proposed BD-SSM equivalent circuit for the evaluation of GaN-based transistors. The modelling results have less than 2% deviation when compared to the measurement values; this is significant since all published results known to us have 5% or higher percentage deviation. Therefore, the proposed BD-SSM equivalent circuit is one of the most accurate GaN HEMT model for amplifier design in today’s Radio Frequency (RF) applications.en_US
dc.description.scholarlevelGraduateen_US
dc.identifier.urihttp://hdl.handle.net/1828/7662
dc.language.isoenen_US
dc.rightsAvailable to the World Wide Weben_US
dc.subjectsmall-signal modelen_US
dc.subjectgallium nitrideen_US
dc.subjecthigh electron mobility transistoren_US
dc.subjecttransistor modellingen_US
dc.titleHigh Frequency Small-Signal Modelling of GaN High Electron Mobility Transistors for RF applicationsen_US
dc.typeprojecten_US

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