Coulomb blockade plasmonic switch

dc.contributor.authorXiang, Dao
dc.contributor.authorWu, Jian
dc.contributor.authorGordon, Reuven
dc.date.accessioned2023-04-27T21:52:31Z
dc.date.available2023-04-27T21:52:31Z
dc.date.copyright2017en_US
dc.date.issued2017-03-16
dc.description.abstractTunnel resistance can be modulated with bias via the Coulomb blockade effect, which gives a highly nonlinear response current. Here we investigate the optical response of a metal–insulator–nanoparticle–insulator–metal structure and show switching of a plasmonic gap from insulator to conductor via Coulomb blockade. By introducing a sufficiently large charging energy in the tunnelling gap, the Coulomb blockade allows for a conductor (tunneling) to insulator (capacitor) transition. The tunnelling electrons can be delocalized over the nanocapacitor again when a high energy penalty is added with bias. We demonstrate that this has a huge impact on the plasmonic resonance of a 0.51 nm tunneling gap with ∼70% change in normalized optical loss. Because this structure has a tiny capacitance, there is potential to harness the effect for high-speed switching.en_US
dc.description.reviewstatusRevieweden_US
dc.description.scholarlevelFacultyen_US
dc.description.sponsorshipThis work is supported by the NSERC CREATE grant Materials for Enhanced Energy Technologies.en_US
dc.identifier.citationXiang, D., Wu, J., & Gordon, R. (2017). Coulomb blockade plasmonic switch. Nano Letters, 17(4), 2584–2588. https://doi.org/10.1021/acs.nanolett.7b00360en_US
dc.identifier.urihttps://doi.org/10.1021/acs.nanolett.7b00360
dc.identifier.urihttp://hdl.handle.net/1828/15015
dc.language.isoenen_US
dc.publisherNano Lettersen_US
dc.subjectCoulomb blockade
dc.subjectnanoparticles
dc.subjectquantum tunnelling
dc.subjectswitching
dc.subject.departmentDepartment of Electrical and Computer Engineering
dc.titleCoulomb blockade plasmonic switchen_US
dc.typePostprinten_US

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