Numerical Study of Three-Dimensional Melt Flows during the TSSG Process of SiC Crystal for the Influence of Input Parameters of RF-Coils and an External Rotating Magnetic Field

Date

2020

Authors

Wang, Lei
Takehara, Yuto
Sekimoto, Atsushi

Journal Title

Journal ISSN

Volume Title

Publisher

Crystals

Abstract

Three-dimensional numerical simulations were conducted for the Top-Seeded Solution Growth (TSSG) process of silicon carbide (SiC) crystals. We investigated the influence of coils frequency and peak current, and an applied rotating magnetic field (RMF) on the melt flow developing in this system. Numerical simulation results show that the Marangoni flow in the melt becomes stronger at higher coils frequencies due to the decreasing coils-induced electromagnetic field strength. Results also show that the use of external RMF may improve supersaturation uniformity along the seed if it is properly adjusted with respect to the coils-induced electromagnetic field strength. Furthermore, it is predicted that the application of RMF and seed rotation in the same direction may enhance supersaturation below the seed.

Description

Keywords

SiC crystal growth, TSSG method, flow control

Citation

Dost, S. Wang, L., Sekimoto, A. Okano, Y., Ujihara, T. & Dost, S. (2020). Numerical Study of Three-Dimensional Melt Flows during the TSSG Process of SiC Crystal for the Influence of Input Parameters of RF-Coils and an External Rotating Magnetic Field. Crystals, 10(2), 111. https://doi.org/10.3390/cryst10020111