Regulating strain in perovskite thin films through charge-transport layers

Simple item page
dc.contributor.authorXue, Ding-Jiang
dc.contributor.authorHou, Yi
dc.contributor.authorLiu, Shun-Chang
dc.contributor.authorWei, Mingyang
dc.contributor.authorChen, Bin
dc.contributor.authorHuang, Ziru
dc.contributor.authorLi, Zongbao
dc.contributor.authorSun, Bin
dc.contributor.authorProppe, Andrew H.
dc.contributor.authorDong, Yitong
dc.contributor.authorSaidaminov, Makhsud I.
dc.contributor.authorKelley, Shana O.
dc.contributor.authorHu, Jin-Song
dc.contributor.authorSargent, Edward H.
dc.date.accessioned2025-01-23T18:38:36Z
dc.date.available2025-01-23T18:38:36Z
dc.date.issued2020
dc.description.abstractThermally-induced tensile strain that remains in perovskite films following annealing results in increased ion migration and is a known factor in the instability of these materials. Previously-reported strain regulation methods for perovskite solar cells (PSCs) have utilized substrates with high thermal expansion coefficients that limits the processing temperature of perovskites and compromises power conversion efficiency. Here we compensate residual tensile strain by introducing an external compressive strain from the hole-transport layer. By using a hole-transport layer with high thermal expansion coefficient, we compensate the tensile strain in PSCs by elevating the processing temperature of hole-transport layer. We find that compressive strain increases the activation energy for ion migration, improving the stability of perovskite films. We achieve an efficiency of 16.4% for compressively-strained PSCs; and these retain 96% of their initial efficiencies after heating at 85°C for 1000 hours—the most stable wide-bandgap perovskites (above 1.75 eV) reported so far.
dc.description.reviewstatusReviewed
dc.description.scholarlevelFaculty
dc.description.sponsorshipThis publication is based in part on work supported by the US Department of the Navy, Office of Naval Research (Grant Award No. N00014-17-1-2524), the Ontario Research Fund Research Excellence Program, and by the Natural Sciences and Engineering Research Council (NSERC) of Canada. D.-J.X. acknowledges the support of the National Natural Science Foundation of China (21922512, 21875264), and the Youth Innovation Promotion Association CAS (2017050).
dc.identifier.citationXue, D., Hou, Y., Liu, S., Wei, M., Chen, B., Huang, Z., Li, Z., Sun, B., Proppe, A. H., Dong, Y., Saidaminov, M. I., Kelley, S. O., Hu, J., & Sargent, E. H. (2020). Regulating strain in perovskite thin films through charge-transport layers. Nature Communications, 11(1). https://doi.org/10.1038/s41467-020-15338-1
dc.identifier.urihttps://doi.org/10.1038/s41467-020-15338-1
dc.identifier.urihttps://hdl.handle.net/1828/20991
dc.language.isoen
dc.publisherNature Communications
dc.rightsAttribution 4.0 International
dc.rights.urihttps://creativecommons.org/licenses/by/4.0/
dc.subject.departmentDepartment of Chemistry
dc.subject.departmentDepartment of Electrical and Computer Engineering
dc.titleRegulating strain in perovskite thin films through charge-transport layers
dc.typeArticle

Files

Original bundle
Now showing 1 - 1 of 1
Thumbnail Image
Name:
xue_dingjiang_NatCommuns_2020.pdf
Size:
1.97 MB
Format:
Adobe Portable Document Format
Download

Collections

Faculty and Staff Publications
 
University of Victoria Libraries

We acknowledge and respect the Lək̓ʷəŋən (Songhees and Esquimalt) Peoples on whose territory the university stands, and the Lək̓ʷəŋən and W̱SÁNEĆ Peoples whose historical relationships with the land continue to this day.