Permanent lattice compression of lead-halide perovskite for persistently enhanced optoelectronic properties

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dc.contributor.authorBoopathi, Karunakara Moorthy
dc.contributor.authorMartín-García, Beatriz
dc.contributor.authorRay, Aniruddha
dc.contributor.authorPina, Joao M.
dc.contributor.authorMarras, Sergio
dc.contributor.authorSaidaminov, Makhsud I.
dc.contributor.authorBonaccorso, Francesco
dc.contributor.authorStasio, Francesco Di
dc.contributor.authorSargent, Edward H.
dc.contributor.authorManna, Liberato
dc.contributor.authorAbdelhady, Ahmed L.
dc.date.accessioned2025-01-23T18:38:36Z
dc.date.available2025-01-23T18:38:36Z
dc.date.issued2020
dc.description.abstractUnder mild mechanical pressure, halide perovskites show enhanced optoelectronic properties. However, these improvements are reversible upon decompression, and permanent enhancements have yet to be realized. Here, we report antisolvent-assisted solvent acidolysis crystallization that enables us to prepare methylammonium lead bromide single crystals showing intense emission at all four edges under ultraviolet light excitation. We study structural variations (edge-vs-center) in these crystals using micro-X-ray diffraction and find that the enhanced emission at the edges correlates with lattice compression compared to in the central areas. Time-resolved photoluminescence measurements show much longer-lived photogenerated carriers at the compressed edges, with radiative component lifetimes of ∼1.4 μs, 10 times longer than at the central regions. The properties of the edges are exploited to fabricate planar photodetectors exhibiting detectivities of 3 × 10¹³ Jones, compared to 5 × 10¹² Jones at the central regions. The enhanced lifetimes and detectivities correlate to the reduced trap state densities and the formation of shallower traps at the edges due to lattice compression.
dc.description.reviewstatusReviewed
dc.description.scholarlevelFaculty
dc.description.sponsorshipWe thank Dr. F. De Angelis (Plasmon Nanotechnologies Group - IIT) for access to the Raman equipment for the measurements and IIT Clean Room Facility for access to the equipment necessary for device fabrication. We thank Dr. Roman Krahne (Optoelectronics group - IIT) for access to probe station from Janis Research for photodetector measurement. We thank Simone Lauciello (Electron Microscopy Facility - IIT) for collecting the SEM images.
dc.identifier.citationBoopathi, K. M., Martín-García, B., Ray, A., Pina, J. M., Marras, S., Saidaminov, M. I., Bonaccorso, F., Di Stasio, F., Sargent, E. H., Manna, L., & Abdelhady, A. L. (2020). Permanent lattice compression of Lead-Halide perovskite for persistently enhanced optoelectronic properties. ACS Energy Letters, 5(2), 642–649. https://doi.org/10.1021/acsenergylett.9b02810
dc.identifier.urihttps://doi.org/10.1021/acsenergylett.9b02810
dc.identifier.urihttps://hdl.handle.net/1828/20989
dc.language.isoen
dc.publisherACS Energy Letters
dc.rightsAttribution 4.0 International
dc.rights.urihttps://creativecommons.org/licenses/by/4.0/
dc.subjectCentre for Advanced Materials and Related Technology (CAMTEC)
dc.subject.departmentDepartment of Chemistry
dc.subject.departmentDepartment of Electrical and Computer Engineering
dc.titlePermanent lattice compression of lead-halide perovskite for persistently enhanced optoelectronic properties
dc.typeArticle

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