Impact of tetrakis(dimethylamido)tin(IV) degradation on atomic layer deposition of tin oxide films and perovskite solar cells

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dc.contributor.authorQiu, Shuang
dc.contributor.authorAmaro, Augusto
dc.contributor.authorFabulyak, Diana
dc.contributor.authorAppleby-Millette, Julien
dc.contributor.authorConover, Cassidy
dc.contributor.authorZhang, Dongyang
dc.contributor.authorYeddu, Vishal
dc.contributor.authorCheong, I Teng
dc.contributor.authorPaci, Irina
dc.contributor.authorSaidaminov, Makhsud I.
dc.date.accessioned2025-01-23T18:38:35Z
dc.date.available2025-01-23T18:38:35Z
dc.date.issued2024
dc.description.abstractTin oxide (SnOx) films synthesized by atomic layer deposition (ALD) are widely explored in a range of optoelectronic devices including electrochemical sensors, transistors, and photovoltaics. However, the integrity of the key ALD-SnOx precursor, namely tetrakis(dimethylamido)tin (IV) (TDMASn), and its influence on the properties of ultimate films remain unexplored. Here a significant degradation of TDMASn into bis(dimethylamido)tin(II) via the Sn-imine complex is reported, and its impact on the corresponding films and devices is examined. It is found, surprisingly, that this degradation does not affect the growth kinetics and morphology of ALD-SnOx films. But it notably deteriorates their electronic properties, resulting in films with twice the electrical resistance due to different oxidation mechanisms of the degradation products. Perovskite solar cells employing such films exhibit a significant loss in power conversion efficiency, primarily due to charge transport and transfer losses. These findings urge strategies to stabilize TDMASn, a critical precursor for ALD-SnOx films, or to identify alternative materials to achieve efficient and reliable devices.
dc.description.reviewstatusReviewed
dc.description.scholarlevelFaculty
dc.description.sponsorshipThe authors thank Seastar Chemicals ULC, Mitacs Accelerate (IT34534), and Canada's Natural Sciences and Engineering Research Council (ALLRP 580764 – 22) for their financial support. M.I.S. is grateful to the NSERC (RGPIN-2020-04239), the Canadian Foundation for Innovation (40326), B.C. British Columbia Knowledge Development Fund (806169), and the Canada Research Chairs Program (CRC-2019-00297) for financial support. The authors thank Dr. Brian Patrick (Structural Chemistry Facility, Department of Chemistry, University of British Columbia) for the support in identifying the structure of BDMASn dimer, and Shaun Cembella and Collin Campbell (Seastar Chemicals ULC) for technical support, as well as helpful discussions.
dc.identifier.citationQiu, S., Amaro, A., Fabulyak, D., Appleby-Millette, J., Conover, C., Zhang, D., Yeddu, V., Cheong, I. T., Paci, I., & Saidaminov, M. I. (2024). Impact of tetrakis(dimethylamido)tin(IV) degradation on atomic layer deposition of tin oxide films and perovskite solar cells. Small. https://doi.org/10.1002/smll.202404966
dc.identifier.urihttps://doi.org/10.1002/smll.202404966
dc.identifier.urihttps://hdl.handle.net/1828/20982
dc.language.isoen
dc.publisherSmall
dc.rightsAttribution 4.0 International
dc.rights.urihttps://creativecommons.org/licenses/by/4.0/
dc.subjectatomic layer deposition
dc.subjectelectron transporter layer
dc.subjectperovskite solar cells
dc.subjecttin oxide
dc.titleImpact of tetrakis(dimethylamido)tin(IV) degradation on atomic layer deposition of tin oxide films and perovskite solar cells
dc.typeArticle

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