Transport phenomena in liquid phase diffusion growth of silicon germanium

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dc.contributor.authorArmour, Neil Alexander
dc.contributor.supervisorDost, Sadik
dc.date.accessioned2012-06-05T20:07:49Z
dc.date.available2012-06-05T20:07:49Z
dc.date.copyright2012en_US
dc.date.issued2012-06-05
dc.degree.departmentDepartment of Mechanical Engineering
dc.degree.levelDoctor of Philosophy Ph.D.en_US
dc.description.abstractSilicon Germanium, SiGe, is an important emerging semiconductor material. In order to optimize growth techniques for SiGe production, such as Liquid Phase Diffusion, LPD, or Melt Replenishment Czochralski, a good understanding of the transport phenomena in the melt is required. In the context of the Liquid Phase Diffusion growth technique, the transport phenomena of silicon in a silicon-germanium melt has been explored. Experiments isolating the dissolution and transport of silicon into a germanium melt have been conducted under a variety of flow conditions. Preliminary modeling of these experiments has also been conducted and agreement with experiments has been shown. In addition, full LPD experiments have also been conducted under varying flow conditions. Altered flow conditions were achieved through the application of a variety of magnetic fields. Through the experimental and modeling work better understanding of the transport mechanisms at work in a silicon-germanium melt has been achieved.en_US
dc.description.scholarlevelGraduateen_US
dc.identifier.urihttp://hdl.handle.net/1828/4003
dc.languageEnglisheng
dc.language.isoenen_US
dc.rights.tempAvailable to the World Wide Weben_US
dc.subjectCrystal Growthen_US
dc.subjectSilicon Germaniumen_US
dc.subjectLiquid Phase Diffusionen_US
dc.subjectTransport Phenomenaen_US
dc.titleTransport phenomena in liquid phase diffusion growth of silicon germaniumen_US
dc.typeThesisen_US

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