Ferromagnetic Multilayers: Magnetoresistance, Magnetic Anisotropy, and Beyond

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dc.contributor.authorRizal, Conrad
dc.contributor.authorMoa, Belaid
dc.contributor.authorNiraula, Boris B.
dc.date.accessioned2020-10-19T23:45:35Z
dc.date.available2020-10-19T23:45:35Z
dc.date.copyright2016en_US
dc.date.issued2016
dc.description.abstractObtaining highly sensitive ferromagnetic, FM, and nonmagnetic, NM, multilayers with a large room-temperature magnetoresistance, MR, and strong magnetic anisotropy, MA, under a small externally applied magnetic field, H, remains a subject of scientific and technical interest. Recent advances in nanofabrication and characterization techniques have further opened up several new ways through which MR, sensitivity to H, and MA of the FM/NM multilayers could be dramatically improved in miniature devices such as smart spin-valves based biosensors, non-volatile magnetic random access memory, and spin transfer torque nano-oscillators. This review presents in detail the fabrication and characterization of a few representative FM/NM multilayered films—including the nature and origin of MR, mechanism associated with spin-dependent conductivity and artificial generation of MA. In particular, a special attention is given to the Pulsed-current deposition technique and on the potential industrial applications and future prospects. FM multilayers presented in this review are already used in real-life applications such as magnetic sensors in automobile and computer industries. These material are extremely important as they have the capability to efficiently replace presently used magnetic sensors in automobile, electronics, biophysics, and medicine, among many others.en_US
dc.description.reviewstatusRevieweden_US
dc.description.scholarlevelFacultyen_US
dc.description.sponsorshipThis review article is partially based on C. Rizal’s PhD Dissertation at the University of British Columbia, Canada, and ongoing work at University of Victoria, in Canada and University of California San Diego, in the USA. This work would not have been possible without the contributions from C.R.’s previous research group members at Muroran Institute of Technology, Japan, University of British Columbia and University of Victoria, in Canada and University of California San Diego, in the USA – including, R.K. Pokharel (Kyushu University, Japan), Y. Ueda, A. Yamada, W. Takakura, T. Houga, H. Zaman, A. Adachi, A. Matsuda, H. Xu, R. Filho, K. Y. Hong, R. Tolley, R. Choi, S. Montoya and J. Wingert. This work was partially funded by Natural Sciences and Engineering Research Council – NSERC, Canada, and supported by Center for Magnetic Memory Research at UC San Diego. C. Rizal greatly acknowledges Eric E. Fullerton (CMRR, UC San Diego, USA), Drew Hall (UC San Diego, USA), Brett Heinrich and Karen Kavanagh (Simon Fraser University, Canada), and Nicolas A. F. Jaeger (The University of British Columbia, Canada) for excellent feedback, fruitful comments, and meaningful discussions.en_US
dc.identifier.citationRizal, C., Moa, B., & Niraula, B. B. (2016). Ferromagnetic Multilayers: Magnetoresistance, Magnetic Anisotropy, and Beyond. Magnetochemistry, 2(2), 1- 32. https://doi.org/10.3390/magnetochemistry2020022.en_US
dc.identifier.urihttps://doi.org/10.3390/magnetochemistry2020022
dc.identifier.urihttp://hdl.handle.net/1828/12230
dc.language.isoenen_US
dc.publisherMagnetochemistryen_US
dc.subjectferromagnetic multilayers
dc.subjectmagnetoresistance
dc.subjectmagnetic anisotropy
dc.subjectpulsed-current deposition
dc.subjectsensors
dc.subjectmagnetoplasmonics
dc.subject.departmentDepartment of Electrical and Computer Engineering
dc.titleFerromagnetic Multilayers: Magnetoresistance, Magnetic Anisotropy, and Beyonden_US
dc.typeArticleen_US

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